Optical investigation of hole and electron subbands in HgTe-CdTe superlattices.
Optical investigation of hole and electron subbands in HgTe-CdTe superlattices.
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DOI：
10.1103/physrevlett.55.328
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发表时间：
1985-07
影响因子：
8.6
通讯作者：
Olego;Faurie;Raccah
中科院分区：
文献类型：
--
作者：
Olego;Faurie;Raccah
应用光致发光光谱和共振拉曼散射研究 HgTe-CdTe 超晶格的电子特性。已确定 CdTe 层中的自旋轨道分裂价态是量子化的，并且小能带偏移会影响空穴的寿命。当子带能量接近 CdTe 的导带边缘时，可以测量 HgTe 方阱中电子子带的辐射复合。光谱表明 HgTe 子带中的弛豫过程涉及光学声子的发射。
Photoluminescence spectroscopy and resonant Raman scattering were applied to investigate electronic properties of HgTe-CdTe superlattices. It is established that the spin-orbit split-off valence states in the CdTe layers are quantized and that the small band offset affects the lifetime of the holes. Radiative recombinations from electron subbands in the HgTe square wells can be measured when the subband energies are close to the conduction-band edge of CdTe. The spectra suggest that relaxation processes in the HgTe subbands involve the emission of optical phonons.