Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111) -: art. no. 146102
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111) -: art. no. 146102
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DOI：
10.1103/physrevlett.94.146102
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发表时间：
2005-04-15
影响因子：
8.6
通讯作者：
Ploog, KH
中科院分区：
文献类型：
--
作者：
Ristic, J;Calleja, E;Ploog, KH
生长了自组装的柱状AlGaN/GaN纳米腔，其中GaN量子盘的有源区嵌入在AlGaN纳米柱中，并由AlN/GaN布拉格反射镜包层。由于硅界面处的弛豫和纳米柱的自由表面与体积比，纳米腔没有裂纹或扩展的缺陷。通过调节Al含量和GaN薄膜厚度，有源区的发射与峰值反射率相匹配。可以清楚地观察到依赖于圆盘厚度和圆盘内非均匀应变分布的量子限制效应。
Self-assembled columnar AlGaN/GaN nanocavities, with an active region of GaN quantum disks embedded in an AlGaN nanocolumn and cladded by top and bottom AlN/GaN Bragg mirrors, were grown. The nanocavity has no cracks or extended defects, due to the relaxation at the Si interface and to the nanocolumn free-surface to volume ratio. The emission from the active region matched the peak reflectivity by tuning the Al content and the GaN disks thickness. Quantum confinement effects that depend on both the disk thickness and the inhomogeneous strain distribution within the disks are clearly observed.