Leakage current asymmetry and resistive switching behavior of SrTiO3
Leakage current asymmetry and resistive switching behavior of SrTiO3
复制标题
DOI：
10.1063/1.4764544
复制
发表时间：
2012-10-22
影响因子：
4
通讯作者：
O'Neill, Anthony
中科院分区：
文献类型：
--
作者：
Mojarad, Shahin A.;Goss, Jonathan P.;O'Neill, Anthony
研究了SrTiO_3金属-绝缘体-金属电容器的阻变特性。电流密度与电压（J-V）的特性显示在所有温度下检查的不对称性，与电阻开关行为在高温下观察。的不对称性解释的相对缺乏的电子陷阱在一个电极，这是确定从对称的J-V曲线在室温下获得由于在膜中的占主导地位的电缺陷的再分布。我们提出了证据的电阻开关模型起源于缺陷扩散（可能是氧空位）在高温下。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4764544]
The resistive switching characteristics of SrTiO3 metal-insulator-metal capacitors are investigated. The current-density versus voltage (J-V) characteristics show asymmetry at all temperatures examined, with resistive switching behavior observed at elevated temperatures. The asymmetry is explained by the relative lack of electron traps at one electrode, which is determined from the symmetric J-V curve obtained at room temperature due to the redistribution of the dominant electrical defects in the film. We present evidence for the model of resistive switching originating from defect diffusion (possibly oxygen vacancies) at high temperatures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764544]