High porosity Mo doped BiVO4 film by vanadium re-substitution for efficient photoelectrochemical water splitting
High porosity Mo doped BiVO4 film by vanadium re-substitution for efficient photoelectrochemical water splitting
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通过钒再取代实现高效光电化学水分解的高孔隙率 Mo 掺杂 BiVO4 薄膜
DOI：
10.1016/j.cej.2020.124365
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发表时间：
2020-06
影响因子：
15.1
通讯作者：
Jie Li
中科院分区：
文献类型：
--
作者：
Xiang Yin;Weixin Qiu;Wenzhang Li;Chang Li;Keke Wang;Xuetao Yang;Libo Du;Yang Liu;Jie Li
钒酸铋（BiVO 4）是研究最多的光阳极之一，其光电化学（PEC）性能受到缓慢的电荷迁移率和大量的复合损失的限制。在此，通过过量Mo掺杂和随后的钒再置换，合成了高孔隙率Mo掺杂BiVO 4薄膜。电化学活性表面积测试结果表明，由于过量Mo的溶解，所制备的BiVO 4基光阳极在电解液和薄膜之间具有较大的接触面积.在1.23 Vvs下，VMo-BiVO 4的光电流为6.12 mA/cm 2。在0.2M KPi +0.2M Na_2SO_3溶液中，可逆氢电极的电荷分离效率约为96%，在1.23Vvs. RHE）是原始BiVO_4的6.91倍。结果表明，合理的掺杂结构设计可以保证PEC水分解的高性能。
Bismuth vanadate (BiVO4) is one of the most studied photoanodes whose photoelectrochemical (PEC) performance is limited by the sluggish charge mobility and substantial recombination losses. Here, a high porosity Mo doped BiVO4film was synthesized by excess Mo doping and following vanadium re-substitution. The as-prepared BiVO4based photoanode has large contact area between the electrolyte and the film due to the dissolution of excess Mo, shown by the results of electrochemically active surface area tests. As a result, the photocurrent of VMo-BiVO4is 6.12 mA/cm2at 1.23 Vvs. the reversible hydrogen electrode (RHE) in 0.2 M KPi + 0.2 M Na2SO3with the charge separation efficiency of ~96%, and the photocurrent of VMo-BiVO4(3.18 mA/cm2at 1.23 Vvs. RHE) is 6.91 times of pristine BiVO4in 0.2 M KPi. This approach demonstrated that a reasonable doping structure design could guarantee PEC water splitting with high performance.
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