ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
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DOI：
10.1063/1.2783262
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发表时间：
2007-09
影响因子：
4
通讯作者：
Z. Ye;Jianguo Lu;Yinzhu Zhang;Yujia Zeng;Lujian Chen;F. Zhuge;G. Yuan;Haiping He;Luming Zhu;Jun Huang;Binghui Zhao
中科院分区：
文献类型：
--
作者：
Z. Ye;Jianguo Lu;Yinzhu Zhang;Yujia Zeng;Lujian Chen;F. Zhuge;G. Yuan;Haiping He;Luming Zhu;Jun Huang;Binghui Zhao
在Si衬底上制备了ZnO同质结发光二极管（LED），该发光二极管由N-Al共掺杂的p型ZnO和Al掺杂的n型ZnO组成。电流-电压特性测试表明，器件具有典型的二极管特性，阈值电压约为3.3V。在110 K的电致发光（EL）带由3.18eV的近带边发射和2.58eV的深能级发射组成。的EL发射被分配为辐射重组，大概是供体-受体对，在p型层的LED。电致发光随温度的猝灭归因于ZnO：（N，Al）层的p型导电性的退化。
ZnO homojunction light-emitting diodes (LEDs), comprised of N–Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3V. The electroluminescence (EL) bands at 110K consisted of a near-band-edge emission at 3.18eV and a deep level emission at 2.58eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.