Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure
Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure
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DOI：
10.1063/1.1524295
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发表时间：
2002-11
影响因子：
4
通讯作者：
T. Taniguchi;K. Watanabe;S. Koizumi;I. Sakaguchi;T. Sekiguchi;S. Yamaoka
中科院分区：
文献类型：
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作者：
T. Taniguchi;K. Watanabe;S. Koizumi;I. Sakaguchi;T. Sekiguchi;S. Yamaoka
在高温高压条件下生长的立方氮化硼（cBN）单晶中，观察到了波长为250 nm的紫外光发射。我们发现，当少量的Be被添加到晶体中时，Be的掺杂剂被定位在生长的晶体中。晶体具有蓝色富Be区和琥珀色富Be区的边界。这些彩色区域由增长部门的边界划分。当在边界上感应直流电时，清楚地观察到UV光发射。晶体可包括沿生长扇区沿着的自组织p-n区。尽管一些晶体缺陷仍然阻止晶体表现出可以发射具有宽带隙（6.3eV）的UV光的材料的性质，但值得注意的是，已经合成了包含自组织p-n边界并显示UV光发射的块状单晶。
Ultraviolet light emission at a wavelength of 250 nm was observed from Be-doped single crystals of cubic boron nitride (cBN) grown at high pressure and high temperatures. We found that dopants of Be were localized in the grown crystals when a small amount of Be was added to the crystals. The crystals had boundaries of blue-colored Be-rich regions and amber-colored ones. These colored regions were divided by the boundaries of growth sectors. When a direct current was induced across the boundaries, UV light emission was clearly observed. The crystals may include self-organized p–n regions along the growth sectors. Although some crystalline imperfections still prevent the crystals from exhibiting properties of materials that can emit UV light with a wide band gap (6.3 eV), it is noticeable that bulk single crystals have been synthesized that contain self-organized p–n boundaries and show UV light emission.