Integration of GaN-LEDs with Heterogeneous Device Components by Epitaxil Film Bonding
Integration of GaN-LEDs with Heterogeneous Device Components by Epitaxil Film Bonding
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DOI：
10.1109/ectc32862.2020.00267
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发表时间：
2020-06
期刊：
影响因子：
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通讯作者：
M. Ogihara;Y. Amemiya;S. Yokoyama
中科院分区：
文献类型：
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作者：
M. Ogihara;Y. Amemiya;S. Yokoyama
研究了 2 μm 厚的薄膜氮化镓 (GaN) LED 和氧化钛 (TiO2) 波导的异质集成，用于生物医学和其他潜在应用。首先研究了薄膜 GaN-LED 在聚酰亚胺 (PI) 涂覆的硅 (Si) 平坦客体基板上的外延膜键合 (EFB)，然后研究了薄膜 GaN-LED 在 TiO2 波导上的 EFB。将从Si母基板上剥离的薄膜GaN-LED在室温下、在大气环境中、无需粘合剂的情况下粘合到TiO2波导上的PI涂层光栅上。证明了薄膜GaN-LED与光栅的良好结合，并通过EFB实现了薄膜GaN-LED与波导的集成。键合在波导上的薄膜 GaN-LED 的光谱峰移表明，有源层的压应力是通过薄膜 GaN-LED 的 EFB 释放到波导上的。这项研究表明，EFB 工艺可实现在采用各种光学和电子元件实现的异质基板上实现薄膜器件的集成。
Heterogeneous integration of the thin film gallium-nitride (GaN) LEDs of 2 μm thick and titanium oxide (TiO2) waveguide were studied for biomedical and other potential applications. Epitaxial film bonding (EFB) of the thin film GaN-LEDs on the flat guest substrate of polyimide (PI)-coated silicon (Si) was first investigated and then the EFB of the thin film GaN-LEDs on the TiO2 waveguide was investigated. The thin film GaN-LEDs released from the mother substrate of Si were bonded on the PI-coated optical grating on the TiO2 waveguide at room temperature in the atmospheric environment with no adhesive. Good bond of the thin film GaN-LED on the optical grating was proved and integration of the thin film GaN-LED and waveguide by EFB was achieved. The spectrum peak shift of thin film GaN-LED bonded on the waveguide suggests that compressive stress to the active layer was released by the EFB of the thin film GaN-LED onto the waveguide. This study suggests that the EFB process is feasible to achieve integration of thin film devices on heterogeneous substrates implemented with various optical and electronic components.