Circuit Techniques for Enhanced Channel Selectivity in Passive Mixer-First Receivers
Circuit Techniques for Enhanced Channel Selectivity in Passive Mixer-First Receivers
复制标题
用于增强无源混频器优先接收器通道选择性的电路技术
DOI：
10.1109/rfic.2018.8429040
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
A. Molnar
中科院分区：
文献类型：
--
作者：
Edward C. Szoka;A. Molnar
提出了两种技术来提高无源混频第一接收机的信道选择性。正电容反馈和/或分流陷波提供更陡峭的基带，从而提供射频、阻抗滚降和改善的相邻通道线性度。该接收机工作在2-11 GHz的射频频率，在FRF=5 GHz时，对于70 MHz(BBBW=30 MHz)的阻塞频偏，实现了+1.8dBm的阻塞PLDB压缩和+20dBm的IIP3。在FRF=2-8 GHz的频率范围内，噪声系数从9±LDB到11±LDB。该芯片采用130 nm SiGe BiCMOS工艺制造。
Two techniques are proposed to enhance channel selectivity in passive-mixer first receivers. Positive capacitive feedback and/or a shunting notch provides steeper baseband, and thus RF, impedance roll-off and improved adjacent-channel linearity. The receiver operates at RF frequencies from 2-11GHz and achieves a blocker PldB compression of +1.8dBm and IIP3 of +20dBm for a blocker frequency-offset of 70MHz (BBBW=30MHz) at fRF=5GHz. The NF ranges from 9±ldB to 11±ldB over the frequency range of fRF=2-8GHz. The chip has been fabricated in a 130nm SiGe BiCMOS technology.