A charge control relation for bipolar transistors

A charge control relation for bipolar transistors
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双极晶体管的电荷控制关系

DOI:
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发表时间:
1970
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通讯作者:
H. Gummel
H. Gummel
中科院分区:
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文献类型:
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作者:
H. Gummel

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我们给出一个关系式,它把发射极和集电极结电压V eb和V eb,集电极电流Ic,以及通过基极端子进入的载流子(pnp晶体管中的电子)的总电荷Q B联系起来:$I_{c} = const{e^(aV_{eb/kT})- e^(aV_{eb / kT})over Q_{B}}。$该关系式对于高喷射条件是有效的,仅受较小的限制。讨论了器件建模的意义。
We give a relation which links emitter and collector junction voltages, V eb and V eb , collector current I c , and the total charge Q b of carriers that enter through the base terminal (electrons in a pnp transistor): $I_{c} = const{e^(aV_{eb / kT}) - e^(aV_{eb / kT})over Q_{b}}.$ This relation is valid for high injection conditions, subject only to minor restrictions. The significance for device modeling is discussed.