Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy
Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy
复制标题
分子束外延晶体生长过程中 (001)GaAs 和 AlGaAs 表面光学响应的振荡
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
M. Kelly
中科院分区：
文献类型：
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作者：
J. Harbison;D. Aspnes;A. A. Studna;L. Florez;M. Kelly
Upon initiation of growth by molecular beam epitaxy, reflectance‐difference (RD) signals for (001)GaAs and AlAs surfaces exhibit a cyclic component that is periodic with (001) atomic bilayer coverage and that follows either surface structure or surface chemistry (coverage), depending on measurement wavelength. These RD oscillations may be phase shifted with respect to their reflection high‐energy electron diffraction counterparts, depending on deposition conditions.
