Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates
Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates
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DOI：
10.1016/j.vacuum.2020.109687
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发表时间：
2020-12
期刊：
影响因子：
4
通讯作者：
Liang Jinghan-;Yang Yuhui;Kong Deqi-;Zhibang Song;Wenliang Wang;Guoqiang Li
中科院分区：
文献类型：
--
作者：
Liang Jinghan-;Yang Yuhui;Kong Deqi-;Zhibang Song;Wenliang Wang;Guoqiang Li
