LETTER TO THE EDITOR: High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
LETTER TO THE EDITOR: High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
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致编辑的信：通过混合外延生长实现高电导 Ge p 沟道异质结构
DOI：
10.1088/0268-1242/19/10/l03
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发表时间：
2004
影响因子：
1.9
通讯作者：
E. Fitzgerald
中科院分区：
文献类型：
--
作者：
R. Morris;T. Grasby;R. Hammond;M. Myronov;O. Mironov;D. Leadley;T. Whall;E. Parker;M. Currie;C. Leitz;E. Fitzgerald
应变Ge p沟道异质结构已通过混合外延生长实现。采用超高真空化学气相沉积法生长了应变调谐Si_（0.4）Ge_（0.6）虚拟衬底，并在低温下用固体源分子束外延法生长了有源层。在非原位退火后，霍尔效应测量显示空穴迁移率在300 K时为1900 cm2 V−1 s−1（10 K时为27 000 cm2 V−1 s−1），密度为1.8 × 1012 cm−2，电导超过当前Ge异质结构。使用最大熵迁移率谱分析，发现1.0 × 1012 cm−2的空穴在300 K时的迁移率为2700 cm 2 V−1 s−1。
Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm2 V−1 s−1 at 300 K (27 000 cm2 V−1 s−1 at 10 K), with a density of 1.8 × 1012 cm−2, giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 × 1012 cm−2 of these holes were found to have a mobility of 2700 cm2 V−1 s−1 at 300 K.