Origin of low Gilbert damping in half metals
Origin of low Gilbert damping in half metals
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DOI：
10.1063/1.3157267
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发表时间：
2009-07-13
影响因子：
4
通讯作者：
Butler, William H.
中科院分区：
文献类型：
--
作者：
Liu, Chunsheng;Mewes, Claudia K. A.;Butler, William H.
本文结合第一性原理计算和扩展的Huumlckel紧束缚模型，对半金属中低Gilbert阻尼的起源进行了研究。这种方法能够预测与未来自旋电子学应用相关的各种材料系统的磁化驰豫下限。对于两个模型体系，Co2MnGe和Co2MnSi的最小阻尼参数分别为1.9×10~(-4)和0.6×10~(-4)。
Using a combination of first-principles calculations and an extended Huumlckel tight binding model this letter reports on the origin of the low Gilbert damping in half metals. This approach enables the prediction of the lower limit for the magnetization relaxation in a wide variety of material systems relevant for future spintronic applications. For the two model systems Co2MnGe and Co2MnSi minimal damping parameters of 1.9x10(-4) and 0.6x10(-4) are predicted.