Enhanced Piezoelectric Property of Barium Titanate Single Crystals with Engineered Domain Configurations

Enhanced Piezoelectric Property of Barium Titanate Single Crystals with Engineered Domain Configurations
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DOI:
10.1143/jjap.38.5505
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发表时间:
1999-09
影响因子:
1.5
通讯作者:
S. Wada;Shingo Suzuki;T. Noma;Takeyuki Suzuki;M. Osada;M. Kakihana;Seung-Eek Park;L. Cross;
S. Wada;Shingo Suzuki;T. Noma;Takeyuki Suzuki;M. Osada;M. Kakihana;Seung-Eek Park;L. Cross;
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
S. Wada;Shingo Suzuki;T. Noma;Takeyuki Suzuki;M. Osada;M. Kakihana;Seung-Eek Park;L. Cross;

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研究了钛酸钡单晶在室温下的压电性能与晶体取向的关系。当沿[001]施加单极电场时,其应变-电场曲线表现出较大的滞后,最终钛酸钡晶体变为单畴状态,压电常数d33为125 pC/N,大于20 kV/cm。另一方面,沿着[111]低于6 kV/cm的电场暴露导致高d33为203 pC/N,并且无迟滞应变与电场行为,这表明在四方钛酸钡晶体中形成了工程畴结构。此外,当沿[111]施加大于6 kV/cm的电场时,其应变-电场曲线出现了两个不连续的变化。在电场作用下的原位观察和拉曼测量表明,电场诱导的相变在10 kV/cm左右发生,从四边形到单斜晶,在30 kV/cm左右发生,从单斜晶到菱形晶。此外,在单斜钛酸钡晶体中,电场沿[111]暴露导致形成另一种新的工程结构域,d33为295 pC/N。
Piezoelectric properties of barium titanate single crystals were investigated at room temperature as a function of crystallographic orientation. When a unipolar electric field was applied along [001], its strain vs electric-field curve showed a large hysteresis, and finally barium titanate crystal became to single-domain state with piezoelectric constant d33 of 125 pC/N over 20 kV/cm. On the other hand, electric-field exposure below 6 kV/cm along [111] resulted in a high d33 of 203 pC/N and a hysteresis-free strain vs electric-field behavior, which suggested the formation of an engineered domain configuration in a tetragonal barium titanate crystal. Moreover, when an electric field over 6 kV/cm was applied along [111], two discontinuous changes were observed in its strain vs electric-field curve. In situ domain observation and Raman measurement under an electric field suggested an electric-field-induced phase transition from tetragonal to monoclinic at around 10 kV/cm, and that from monoclinic to rhombohedral at around 30 kV/cm. Moreover, in a monoclinic barium titanate crystal, electric-field exposure along [111] resulted in the formation of another new engineered domain configuration with d33 of 295 pC/N.