Composition dependence of InP/GaxIn1−xAsyP1−y/InP interface structures analyzed by X-ray CTR scattering measurements
Composition dependence of InP/GaxIn1−xAsyP1−y/InP interface structures analyzed by X-ray CTR scattering measurements
复制标题
通过 X 射线 CTR 散射测量分析 InP/GaxIn1−xAsyP1−y/InP 界面结构的成分依赖性
DOI：
10.1016/s0169-4332(03)00487-2
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发表时间：
2003
影响因子：
6.7
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
M. Tabuchi;H. Kyouzu;M. Takemi;Y. Takeda
使用X射线晶体截断棒（CTR）散射测量研究了InP/GaxIn1−xAsyP1−y/InP界面结构的成分和应力依赖性，以了解为什么III族原子总是广泛分布在InP和GaInAs(P)之间的异质界面周围。结果表明，改变Ga和As成分以保持晶格常数以及改变应力以保持Ga成分并不影响III族原子的分布程度。这表明III族原子的分布既不是由于In和Ga的混合，也不是由于界面周围的局部应力松弛。这种分布可能与有机金属气相外延（OMVPE）系统表面的生长过程有关。
Composition and stress dependences of InP/GaxIn1−xAsyP1−y/InP interface structures were investigated using X-ray crystal truncation rod (CTR) scattering measurements, in order to realize why group-III atoms were always distributed widely around hetero-interfaces between InP and GaInAs(P). The result showed that the change of the Ga and As compositions to keep the lattice constants and the change of the stress to keep the Ga composition did not affect the degree of the distribution of the group-III atoms. It suggested that the distribution of the group-III atoms was due neither to mixing of In and Ga nor to relaxing local stress at around the interfaces. The distribution was probably related to the growth process at the surface in the organometallic vapor phase epitaxy (OMVPE) system.