Band edge alignment of pseudomorphic GaAs1-ySby on GaAs -: art. no. 195339
Band edge alignment of pseudomorphic GaAs1-ySby on GaAs -: art. no. 195339
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DOI：
10.1103/physrevb.70.195339
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发表时间：
2004-11-01
影响因子：
3.7
通讯作者：
Guo, CZ
中科院分区：
文献类型：
--
作者：
Wang, JB;Johnson, SR;Guo, CZ
对具有不同势垒配置的GaAsSb量子阱样品的跃迁能测量表明，在GaAs上生长的相干应变GaAs1-ySby/GaAs异质结的导带偏移量在Sb摩尔分数为y=0.43+/-0.07处具有零交叉。低Sb摩尔分数形成i型带对准，高Sb摩尔分数形成ii型带对准。这是由于大量（58%）的-1.58 eV带隙弯曲分布到导带。在GaAs上生长的伪晶GaAs0.643Sb0.357具有微弱的23+/-23 meV导带偏移和928+/-4 meV带隙能量，是一种适合于1.3 μ m发射的活性材料。
Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs1-ySby/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43+/-0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58 eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 mum emission, pseudomorphic GaAs0.643Sb0.357 grown on GaAs is determined to have a weak, 23+/-23 meV, type-I conduction band offset and a bandgap energy of 928+/-4 meV.