Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves.
Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves.
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DOI：
10.1039/d0cp03761c
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发表时间：
2020-11
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影响因子：
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通讯作者：
Jie Yang;R. Quhe;Shiqi Liu;Yuxuan Peng;Xiaotian Sun;L. Zha;Baochun Wu;Bowen Shi;Chen Yang;Junjie Shi;G. Tian;Changsheng Wang;Jing Lu;Jinbo Yang
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文献类型：
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作者：
Jie Yang;R. Quhe;Shiqi Liu;Yuxuan Peng;Xiaotian Sun;L. Zha;Baochun Wu;Bowen Shi;Chen Yang;Junjie Shi;G. Tian;Changsheng Wang;Jing Lu;Jinbo Yang
近年来，二维范德华晶体中的铁磁有序引起了人们的广泛关注。值得注意的是，在二维Fe3GeTe2中实现了室温金属铁磁性。在这里，我们设计了一种单层(ML)Fe3GeTe2自旋阀器件，将两端连接到铁磁电极上，并在这些铁磁电极上施加磁场。我们用从头算量子输运模拟方法研究了这种自旋阀的自旋输运特性。获得了∼390%的高磁阻，引入门后磁阻显著提高到450-510%。ML Fe3GeTe2自旋阀的磁电阻对应变调制不敏感。我们的研究为磁存储应用提供了一个潜在的选择，并将推动基于这类材料的自旋电子学的进一步研究。
Ferromagnetic order in two-dimensional (2D) van der Waals crystals has been attracting much attention recently. Remarkably, room temperature metallic ferromagnetism is realized in 2D Fe3GeTe2. Here we design a monolayer (ML) Fe3GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes and applying a magnetic field to these ferromagnetic electrodes. We investigate the spin-involved transport characteristics of such a spin valve by using ab initio quantum transport simulation. A high magnetoresistance of ∼390% is obtained and significantly increased to 450-510% after the gates are introduced. The magnetoresistance of the ML Fe3GeTe2 spin valve is insensitive to the strain modulation. Our study provides a potential option for magnetic storage applications and will motivate further studies in spintronics based on this class of materials.