Dual-storage-port Nonvolatile SRAM based on Back-end-of-the-line Processed Hf0.5Zr0.5O2 Ferroelectric Capacitors Towards 3D Selector-free Cross-point Memory
Dual-storage-port Nonvolatile SRAM based on Back-end-of-the-line Processed Hf0.5Zr0.5O2 Ferroelectric Capacitors Towards 3D Selector-free Cross-point Memory
复制标题
基于后端处理 Hf0.5Zr0.5O2 铁电电容器的双存储端口非易失性 SRAM，实现 3D 无选择器交叉点存储器
DOI：
10.1109/jeds.2020.3019024
复制
发表时间：
2020
影响因子：
3.1
通讯作者：
and Ma, T.P.
中科院分区：
文献类型：
--
作者：
Jiang, Hao;Li, Owen;Chen, Wenliang;and Ma, T.P.
