Molecular structure and carrier distributions at semiconductor/dielectric interfaces in organic field-effect transistors studied with sum frequency generation microscopy
Molecular structure and carrier distributions at semiconductor/dielectric interfaces in organic field-effect transistors studied with sum frequency generation microscopy
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DOI：
10.1063/1.3275805
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发表时间：
2009-12-14
影响因子：
4
通讯作者：
Matsumoto, Yoshiyasu
中科院分区：
文献类型：
--
作者：
Nakai, Ikuyo F.;Tachioka, Masaaki;Matsumoto, Yoshiyasu
利用透射-可见光和频显微镜观察了由并五苯薄膜和聚乙烯基苯酚电介质层构成的有机场效应晶体管中半导体/电介质界面。通过载流子注入，界面处的SFG强度大大增加。SFG强度的大幅增强使我们能够清楚地观察到分子的振动光谱和界面处电荷密度的空间分布。
Infrared-visible sum frequency generation (SFG) microscopy was applied to the observation of semiconductor/dielectric interfaces in organic field-effect transistors fabricated with pentacene films and polyvinyl phenol dielectric layers. SFG intensity at the interface was greatly increased by carrier injection. The large enhancement in SFG intensity enables us to observe clearly the vibrational spectra of molecules and the spatial distributions of charge density at the interface.