Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles
Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles
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DOI：
10.1063/1.3225760
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发表时间：
2009-10
影响因子：
3.2
通讯作者：
Feng Yan;Jinhua Li;S. Mok
中科院分区：
文献类型：
--
作者：
Feng Yan;Jinhua Li;S. Mok
基于P3HT和TiO2纳米颗粒复合物的有机光电晶体管具有高灵敏度、快速响应、在可见光和紫外光照射下性能稳定等优点，有望作为低成本的光电传感器应用。每个器件的传输特性表现出一个平行的移动到一个正的栅极电压下的光照射，和沟道电流增加到三个数量级的亚阈值区。器件的阈值电压的漂移与光强度呈非线性关系，这可以归因于电子在嵌入的TiO 2纳米颗粒中的积累。已经发现，由于积分效应，该器件对弱光极其敏感。阈值电压变化与光照强度的关系符合幂律。并建立了一个分析模型来描述这种染料的光敏行为。
Organic phototransistors based on a composite of P3HT and TiO2 nanoparticles have been fabricated, which show high photosensitivity, fast response, and stable performance under both visible and ultraviolet light illumination, and thus they are promising for applications as low cost photosensors. The transfer characteristic of each device exhibits a parallel shift to a positive gate voltage under light illumination, and the channel current increases up to three orders of magnitude in the subthreshold region. The shift in the threshold voltage of the device has a nonlinear relationship with light intensity, which can be attributed to the accumulation of electrons in the embedded TiO2 nanoparticles. It has been found that the device is extremely sensitive to weak light due to an integration effect. The relationship between the threshold voltage change and the intensity of light illumination can be fitted with a power law. An analytical model has been developed to describe the photosensitive behavior of the d...