Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
复制标题
用于硅衬底上 GaN 高电子迁移率晶体管的 Ti/Pt/Ti/Cu 金属化互连
DOI：
10.1143/apex.5.066503
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发表时间：
2012
影响因子：
2.3
通讯作者：
E. Chang
中科院分区：
文献类型：
--
作者：
Yueh;Tza;Yu;Chien;Chia‐Hua Chang;K. Huang;E. Chang
Cu-metallized interconnects for GaN high-electron-mobility transistors (HEMTs) on Si substrate using a Pt/Cu diffusion barrier layer are investigated. Auger electron spectroscopy (AES) depth profiles indicate that the GaN/Au/Ti/Pt/Ti/Cu thin metal structure is thermally stable up to 350 °C. The Cu-metallized devices using the proposed metal scheme exhibited DC characteristics comparable to those of conventional Au-metallized GaN devices even after annealing at 350 °C for 30 min. No degradation in current with time was observed when the device was tested under 28 V high-voltage stress for 24 h at room temperature. These results indicate that the Cu-metallized airbridges with the Ti/Pt/Ti/Cu diffusion barrier layer can be used for GaN HEMT fabrication.
