A model-based, Bayesian approach to the CF4/Ar etch of SiO2
A model-based, Bayesian approach to the CF4/Ar etch of SiO2
复制标题
基于模型的贝叶斯方法对 SiO2 进行 CF4/Ar 蚀刻
DOI：
10.1117/12.2297482
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Bonnecaze, Roger
中科院分区：
文献类型：
--
作者：
Chopra, Meghali J.;Zhu, Xilan;Zhang, Zizhuo Z.;Helpert, Sofia;Verma, Rahul;Bonnecaze, Roger
等离子体蚀刻等高度非线性和复杂工艺的设计和优化具有挑战性且耗时。大量的努力致力于创建等离子体轮廓模拟器，以促进蚀刻配方的开发。然而，这些模拟器通常难以在实践中使用，这是由于在等离子体放电和蚀刻材料的表面动力学中的大量未知参数、蚀刻速率对演变的前轮廓的依赖性以及系统的不同长度尺度。在这里，我们扩大了以前发表的，数据知情，贝叶斯方法体现在平台牛仔竞技表演（沉积和蚀刻的配方优化）的发展。牛仔竞技表演用于预测CF 4/Ar气体化学的功率、压力、气体流速和气体混合比范围内的蚀刻速率和蚀刻轮廓。显示了三个示例：（1）使用CF 4/Ar化学的模拟实验预测未知材料“X”的蚀刻速率，（2）使用CF 4/Ar化学的Plasma-Therm 790 RIE反应器中SiO2的蚀刻速率预测，以及（3）使用水平集方法预测轮廓。
The design and optimization of highly nonlinear and complex processes like plasma etching is challenging and timeconsuming. Significant effort has been devoted to creating plasma profile simulators to facilitate the development of etch recipes. Nevertheless, these simulators are often difficult to use in practice due to the large number of unknown parameters in the plasma discharge and surface kinetics of the etch material, the dependency of the etch rate on the evolving front profile, and the disparate length scales of the system. Here, we expand on the development of a previously published, data informed, Bayesian approach embodied in the platform RODEo (RecipeOptimization forDeposition andEtching). RODEo is used to predict etch rates and etch profiles over a range of powers, pressures, gas flow rates, and gas mixing ratios of an CF4/Ar gas chemistry. Three examples are shown: (1) etch rate predictions of an unknown material “X” using simulated experiments for a CF4/Ar chemistry, (2) etch rate predictions of SiO2in a Plasma-Therm 790 RIE reactor for a CF4/Ar chemistry, and (3) profile prediction using level set methods.