Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
复制标题
变质 HEMT 与 InP HEMT 和 PHEMT 的电特性比较
DOI：
10.1143/jjap.42.2219
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Nakata
中科院分区：
文献类型：
--
作者：
K. Kawada;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani;M. Takakusaki;H. Nakata
在GaAs衬底上制备了变质型In0.52Al0.48As/In0.53Ga0.47As高电子迁移率晶体管。采用分级的InAlAs缓冲层来缓和有源层和衬底之间的晶格失配。将MHEMTs与InP衬底上的HEMTs(InP HEMTs)和赝形HEMTs(PHEMTs)的电学特性进行了比较。目前的MHEMTs在低频噪声和旁栅效应方面表现出优于InP HEMTs和PHEMTs的特性。对于栅长为0.1µm的MHEMTs，获得了足够高的电流增益截止频率210 GHz。
Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and pseudomorphic HEMTs (PHEMTs). Present MHEMTs have exhibited superior characteristics in the low-frequency (LF) noise and side-gate effect to InP HEMTs and PHEMTs. A sufficiently high current-gain cutoff frequency of 210 GHz was obtained for the MHEMTs with gate length of 0.1 µm.