Residual layer self-removal in imprint lithography
Residual layer self-removal in imprint lithography
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DOI：
10.1002/adma.200701659
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发表时间：
2008-04-04
影响因子：
29.4
通讯作者：
Low, Hong Yee
中科院分区：
文献类型：
--
作者：
Dumond, Jarrett;Low, Hong Yee
一种用于印制无残留层的聚合物微纳结构，特别是具有悬垂部分的三维结构的新方法得以展示。这种简单且通用的方法通过使图案化薄膜沿着印制特征的边缘可控地破裂，从而促使残留层自行去除。在不使用等离子体或化学蚀刻剂的情况下，实现了直径小至约500纳米的原始悬垂结构。
A new method for imprinting residual-layer free polymer micro- and nano structures, particularly 3-D structures with overhang, is demonstrated. This simple and versatile method induces self-removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to similar to 500 nm diameter are realized without exposure to plasma or chemical etchants.