Electronic structure of Bi2Sr2Ca1-xYxCu2O8+ delta : Cu 2p x-ray-photoelectron spectra and occupied and unoccupied low-energy states.
Electronic structure of Bi2Sr2Ca1-xYxCu2O8+ delta : Cu 2p x-ray-photoelectron spectra and occupied and unoccupied low-energy states.
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Bi2Sr2Ca1-xYxCu2O8 δ 的电子结构：Cu 2p X 射线光电子能谱以及占据和未占据的低能态。
DOI：
10.1103/physrevb.49.1407
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Groen
中科院分区：
文献类型：
--
作者：
van Veenendaal MA;Sawatzky;Groen
在本文中，我们将提出测量，使用各种光谱，在空穴掺杂化合物Bi 2Sr 2Ca 1-xY（x）Cu（2）O（8+ δ），其中x范围从0.0到1.0。Cu 2 p x射线光电子能谱与使用非局域屏蔽效应的团簇计算进行了比较。空穴掺杂和多重态相互作用的后果也进行了研究。光电子能谱和逆光电子能谱的数据表明，费米能级处的强度是化学势向价带顶移动的结果，同时也是光谱权重从高能态向低能态移动的结果。
In this paper we will present measurements, using various kinds of spectroscopy, on the hole-doped compound Bi2Sr2Ca1-xY(x)Cu(2)O(8+delta), with x ranging from 0.0 to 1.0. Cu 2p x-ray photoelectron spectra are compared with cluster calculations using nonlocal screening effects. The consequences of hole doping and multiplet interaction are also studied. The photoemission and inverse-photoemission data indicate that the appearance of intensity at the Fermi level is a result of the shift of the chemical potential to the top of the valence band combined with a shift of spectral weight from high- to low-energy states.