Dark-Bright Mixing of Interband Transitions in Symmetric Semiconductor Quantum Dots
Dark-Bright Mixing of Interband Transitions in Symmetric Semiconductor Quantum Dots
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DOI：
10.1103/physrevlett.107.166604
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发表时间：
2011-10-14
影响因子：
8.6
通讯作者：
Amand, T.
中科院分区：
文献类型：
--
作者：
Sallen, G.;Urbaszek, B.;Amand, T.
在对称[111]生长的GaAs/AlGaAs量子点的光致发光谱中，沿生长轴施加沿着纵向磁场，我们观察到除了预期的亮态，还名义上暗跃迁的带电和中性激子。我们发现了一个强烈的非单调性，符号变化的字段依赖的明亮的中性激子分裂交换和塞曼效应之间的相互作用。我们的理论定量地表明，这些令人惊讶的实验结果是由于磁场诱导的+/- 3/2重空穴混合，具有C-3 upper点群对称性的系统的固有特性。
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly nonmonotonic, sign-changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced +/- 3/2 heavy-hole mixing, an inherent property of systems with C-3 upsilon point-group symmetry.