Optimization of postgrowth electron-beam curing for focused electron-beam-induced Pt deposits
Optimization of postgrowth electron-beam curing for focused electron-beam-induced Pt deposits
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DOI：
10.1116/1.3622314
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发表时间：
2011-09-01
影响因子：
1.4
通讯作者：
Krenn, Joachim R.
中科院分区：
文献类型：
--
作者：
Plank, Harald;Kothleitner, Gerald;Krenn, Joachim R.
作者使用聚焦电子束诱导的Pt沉积从气态（CH 3）（3）CH 3C 5 H4 Pt前体的导电结构的制造由Pt纳米晶体嵌入在含碳基质中。最近，它已被证明，这种存款的电阻率可以大大提高通过postgrowth电子辐照。这项研究显示了非常有力的证据表明，不完全和非解离的前体分子在沉积过程中纳入存款的有效的电子束固化的关键要素。在电子束固化的早期阶段，这些碎片进一步解离，这导致Pt纳米晶体的轻微生长。这是进一步支持在沉积过程中，可用于提高不完全和非解离的前体分子的结合，导致在更高的固化效率和更低的电介电常数的可变的增长制度的实验。在这种解离主导的固化制度期间，周围的碳基质的主要石墨化的情况下强烈表明，所观察到的电阻率降低主要是由由于减少的晶粒间距离而形成的优选的隧道渗滤路径引起的。此外，它示出的存款高度和用于固化的电子束能量应相互适应，以实现最快的固化时间和最低的电介电常数。这样的优化过程允许固化速率高于1.5 μ m（2）min（-1），电阻率降低到5 +/-0.4 × 10（4）μ Ω cm，代表高达3个数量级的改进。(C)2011年美国真空学会。[DOI：10.1116/1.3622314]
The authors use focused electron-beam-induced Pt deposition from a gaseous (CH3)(3)CH3C5H4Pt precursor for the fabrication of electrically conductive structures consisting of Pt nanocrystals embedded in a carbon containing matrix. Recently it has been demonstrated that the electrical resistivity of such deposits can be strongly improved via postgrowth electron irradiation. This study shows very strong evidence that incompletely and nondissociated precursor molecules incorporated within the deposits during deposition are the key elements for efficient e-beam curing. During the early stages of e-beam curing these fragments are further dissociated, which leads to slight growth of the Pt nanocrystals. This is further supported by variable growth regime experiments during deposition which can be used to enhance the incorporation of incompletely and nondissociated precursor molecules, resulting in higher curing efficiencies and lower electrical resistivities. The absence of a predominant graphitization of the surrounding carbon matrix during this dissociation dominated curing regime suggests strongly that the observed resistivity decrease is mainly caused by the formation of preferred tunnel percolation paths due to reduced intercrystallite distances. Furthermore, it is shown that deposit height and the electron-beam energy used for curing should be adapted to each other to achieve the fastest curing time and the lowest electrical resistivities. Such optimized procedures allow then for curing rates higher than 1.5 mu m(2) min(-1) and resistivity decreased to 5 +/- 0.4 x 10(4) mu Omega cm, representing an improvement of up to 3 orders of magnitude. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3622314]