Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells
Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells
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DOI：
10.7567/apex.8.012301
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发表时间：
2014
影响因子：
2.3
通讯作者：
Mu-Zhe Chen;E. Nakai;K. Tomioka;T. Fukui
中科院分区：
文献类型：
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作者：
Mu-Zhe Chen;E. Nakai;K. Tomioka;T. Fukui
III-V族化合物半导体纳米线（NW）阵列在光伏应用中表现出显著的性能。我们在聚二甲基硅氧烷（PDMS）中嵌入了有序的垂直InP NW阵列，并将其从衬底上剥离以形成AuZn接触。具有衬底的样品表现出92%的非常高的平均吸收率。然而，当阵列被剥离时，光学吸收率降低，特别是在较长波长区域。在NW阵列的背侧上沉积AuZn之后，吸收率增加。这项技术可以使一种新的方法，以较低的制造成本的NW为基础的光电子学。
III–V compound semiconductor nanowire (NW) arrays have exhibited remarkable behavior in photovoltaic applications. We embedded an orderly vertical InP NW array in poly(dimethylsiloxane) (PDMS) and peeled it off from the substrate to form a AuZn contact. The sample with the substrate exhibited a very high average absorptance of 92%. However, when the array was peeled off, the optical absorptance degraded, particularly in the longer-wavelength region. After the AuZn was deposited on the back side of the NW array, the absorptance increased. This technology could enable a new approach for NW-based photovoltaics with a lower fabrication cost.