In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
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DOI：
10.1063/1.126812
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发表时间：
2000-06-26
影响因子：
4
通讯作者：
Speck, JS
中科院分区：
文献类型：
--
作者：
Fini, P;Munkholm, A;Speck, JS
通过在金属有机化学气相沉积环境中进行原位、实时的X射线衍射测量，我们直接观察到了在SiO_2掩模上形成条纹的GaN横向过度生长过程中翼倾斜的出现和演化。这是通过在垂直于[10(1)Over Bar 0](GaN)条纹方向的方向上重复执行通过条形3上的10(1)峰的行扫描来实现的。翼的倾斜度在翅膀开始形成时就开始发展，此后略有增加，在3600 S生长后达到接近1.19度的值。在降温到室温时，倾斜度增加到接近1.36度，这表明降温过程中的热应力对机翼倾斜度的影响很小。然而，在早期的侧向过度生长过程中，面罩密度、成分和应力状态的变化必须被认为是机翼倾斜的可能来源。(C)2000年美国物理研究所。[S0003-6951(00)02926-0]。
By performing in situ, real-time x-ray diffraction measurements in the metalorganic chemical-vapor deposition environment, we have directly observed the emergence and evolution of wing tilt that occurs during the lateral overgrowth of GaN from stripes patterned in a SiO2 mask. This was done by repeatedly performing line scans through the 10 (1) over bar 3 peak in the direction perpendicular to the [10 (1) over bar 0](GaN) stripe direction. The wing tilt developed as soon as the wings started forming, and increased slightly thereafter to reach a value of similar to 1.19 degrees after 3600 s of growth. Upon cooldown to room temperature, the tilt increased to similar to 1.36 degrees, indicating that thermally induced stresses during cooldown have only a small effect on wing tilt. However, changes in mask density, composition, and stress state during early lateral overgrowth must be considered as possible origins of wing tilt. (C) 2000 American Institute of Physics. [S0003-6951(00)02926-0].