Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration
Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration
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DOI：
10.1126/science.abi8884
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发表时间：
2021-12-24
期刊：
影响因子：
56.9
通讯作者：
Golberg, Dmitri
中科院分区：
文献类型：
--
作者：
Tang, Dai-Ming;Erohin, Sergey, V;Golberg, Dmitri
碳纳米管具有螺旋结构，其中手性决定了它们是金属的还是半导体的。利用原位透射电子显微镜，我们应用加热和机械应变来改变局部手性，从而控制单个单壁碳纳米管的电子特性。观察到向更大的手性角区域的转变趋势，并根据取向相关的位错形成能量进行了解释。利用金属纳米管源极和漏极之间的半导体纳米管通道共价结合，实现了金属到半导体的可控过渡。此外，还证明了该纳米管晶体管在室温下的量子输运，其通道长度短至2.8纳米。
Carbon nanotubes have a helical structure wherein the chirality determines whether they are metallic or semiconducting. Using in situ transmission electron microscopy, we applied heating and mechanical strain to alter the local chirality and thereby control the electronic properties of individual single-wall carbon nanotubes. A transition trend toward a larger chiral angle region was observed and explained in terms of orientation-dependent dislocation formation energy. A controlled metal-to-semiconductor transition was realized to create nanotube transistors with a semiconducting nanotube channel covalently bonded between a metallic nanotube source and drain. Additionally, quantum transport at room temperature was demonstrated for the fabricated nanotube transistors with a channel length as short as 2.8 nanometers.