AlInAsSb Impact Ionization Coefficients
AlInAsSb Impact Ionization Coefficients
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DOI：
10.1109/lpt.2019.2894114
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发表时间：
2019-02-15
影响因子：
2.6
通讯作者：
Campbell, Joe C.
中科院分区：
文献类型：
--
作者：
Yuan, Yuan;Zheng, Jiyuan;Campbell, Joe C.
数字合金AlInAsSb雪崩光电二极管表现出低过剩噪声相比，从Si制造。电子和空穴电离系数是模拟和分析高灵敏度接收器的关键参数。我们报告的电离系数使用混合注入技术，采用不同的入射波长和模拟算法的增益测量。
Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those fabricated from Si. The electron and hole ionization coefficients are critical parameters for simulation and analysis of high-sensitivity receivers. We report ionization coefficients using a mixed injection technique that employs measurement of the gain for different incident wavelengths and a simulation algorithm.