A study of defect evolution in multi-energy helium implanted monocrystalline and polycrystalline silicon
A study of defect evolution in multi-energy helium implanted monocrystalline and polycrystalline silicon
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多能氦注入单晶和多晶硅缺陷演化研究
DOI：
10.1002/pssc.200881452
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Abrams K
中科院分区：
文献类型：
--
作者：
Abrams K
在注入时，He离子与金属和半导体中的辐射损伤相互作用以形成气泡（V. Raineri，Phys.Rev.B2，937（2000）[1]）。就Si而言，最近的文献包含了大量关于离子注入、缺陷形成和点缺陷在He辐照的晶体硅（c-Si）中的传输的影响的信息，而关于He注入对多晶硅（poly-Si）的影响的信息很少。本文报告了He注入对c-Si和poly-Si的影响的系统比较。在两种情况下，在缺损形态中观察到有趣且显著的差异。两种材料之间的差异的结果，提出和讨论的作用，在多晶硅中的晶界在捕获杂质，这可能对整体缺陷形态的影响。（© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Upon implantation, He ions interact with radiation damage in metals and semiconductors to form bubbles (V. Raineri, Phys. Rev. B2, 937 (2000) [1]). As far as Si is concerned, recent literature contains much information on the effects of ion implantation, defect formation and the transport of point defects in He‐irradiated crystalline silicon (c‐Si) whereas little information exists on the effects of He implantation on polycrystalline Si (poly‐Si). This paper reports on a systematic comparison of the effects of He implantation on c‐Si and poly‐Si. Interesting and significant differences were observed in the defect morphology in the two cases. Results on the differences between the two materials are presented and discussed in terms of the role that grain boundaries in poly‐Si play in trapping interstitials and the effects that this may have on the overall defect morphology. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)