Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates
Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates
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GaAs 衬底上生长的调制掺杂 InAs 插入沟道 In0.75Al0.25As/In0.75Ga0.25As 结构的传输特性
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
U. Merkt
中科院分区：
文献类型：
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作者：
A. Richter;M. Koch;T. Matsuyama;C. Heyn;U. Merkt
报道了调制掺杂In0.75Al0.25As/In0.75Ga0.25As应变InAs插入沟道异质结中栅压效应的电子输运特性。在温度T=4.2 K时，测得的最高栅压Vg=2 0μ，迁移率达2 15 0 0 0 cm 2(V S)−1，电子密度NS=1.2×10 12 cm−2。电子有效质量m*=0.036 Me由随温度变化的Shubnikov-de Haas测量得到。当第一激发子带被填充时，观察到各向异性迁移率，证明界面散射是电子迁移率的限制机制。
We report on gate voltage dependent electron transport in modulation-doped In0.75Al0.25As/In0.75Ga0.25As heterostructures with strained InAs-inserted-channels grown on GaAs substrates. At temperatures of T=4.2 K we achieve mobilities of up to μ=215 000 cm2(V s)−1 and electron densities of nS=1.2×1012 cm−2 for the highest measured gate voltage of Vg=20 V. The electron effective mass m*=0.036 me is determined by temperature dependent Shubnikov–de Haas measurements. The observation of an anisotropic mobility when the first excited subband becomes populated proves interface scattering to be the limiting mechanism for the electron mobility.