Microstructure, stress and optical properties of CdTe thin films laser-annealed by using an 808-nm diode laser: Effect of the laser scanning velocity
Microstructure, stress and optical properties of CdTe thin films laser-annealed by using an 808-nm diode laser: Effect of the laser scanning velocity
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使用 808 nm 二极管激光器激光退火的 CdTe 薄膜的微观结构、应力和光学性能：激光扫描速度的影响
DOI：
10.3938/jkps.63.229
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发表时间：
2013
影响因子：
0.6
通讯作者：
Hyun
中科院分区：
文献类型：
--
作者：
N. Kim;C. Park;Hyun
利用808 nm连续激光二极管激光器，利用检流镜，在不同的激光扫描速度下对CdTe薄膜进行了激光退火处理。激光退火态的CdTe薄膜中的颗粒沿C(111)、H(110)和C(311)面生长。当激光退火速度为167 mm/S时，由于大颗粒的解体，薄膜的晶格常数达到最小。薄膜的光学带隙能与晶格常数成反比，当激光扫描速度分别为667 mm/S和167 mm/S时，薄膜的光学带隙能量分别为1.439 eV和1.474 eV。在激光扫描速度为167 mm/S的条件下，适当混合了薄膜中的散射颗粒和透明颗粒，使薄膜在可见光区的吸光度提高了2.80，但在此条件下薄膜的结晶度有所下降，出现了细小的再结晶颗粒。
A continuous wave 808-nm diode laser was used for the laser annealing process of CdTe thin films at various laser scanning velocities by using a galvanometric mirror. The grains in the laserannealed CdTe thin films grew along the C (111), H (110) and C (311) planes. The lattice constants of the CdTe thin films reached a minimum at a laser annealing velocity of 167 mm/s due to the disintegration of some large grain. The optical band gap energy of the CdTe thin films was inversely proportional to the lattice constant, showing 1.439 eV and 1.474 eV for the CdTe thin films laserannealed with laser scanning velocities of 667 mm/s and 167 mm/s, respectively. The absorbance of the CdTe thin films showed an improved value of 2.80 in the visible spectral region after laser annealing at a laser scanning velocity of 167 mm/s with the appropriate mixture of scattering and transparent grains in CdTe thin films although the crystallinity had deteriorated and showed the small recrystallized grains under this condition.