Deposition of Ultrathin Fluoropolymer Films on Si(100) and GaAs(100) Surfaces by RF Magnetron Sputtering of Poly(tetrafluoroethylene-co-hexafluoropropylene)
Deposition of Ultrathin Fluoropolymer Films on Si(100) and GaAs(100) Surfaces by RF Magnetron Sputtering of Poly(tetrafluoroethylene-co-hexafluoropropylene)
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通过射频磁控溅射聚四氟乙烯-六氟丙烯共聚物在 Si(100) 和 GaAs(100) 表面沉积超薄含氟聚合物薄膜
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
K. Neoh
中科院分区：
文献类型：
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作者：
G. H. Yang;Yan Zhang;E. Kang;K. Neoh
采用射频等离子溅射的方法，在（100）取向单晶硅和砷化镓晶片上沉积了厚度为10 ~ 50 nm的介电氟聚合物薄膜。x射线光电子能谱、飞行时间二次离子质谱、水接触角测量和傅里叶变换红外光谱结果表明，溅射沉积聚合物薄膜的化学成分和分子结构与所用溅射气体的类型有很大关系。氩等离子溅射沉积的含氟聚合物薄膜的介电常数约为2.1，与原始FEP和聚四氟乙烯薄膜相当。结果表明，氩等离子溅射沉积的FEP（s-FEP(Ar)）薄膜厚度为6 nm，可在常压条件下有效钝化hcl蚀刻的GaAs（100）衬底。超薄s-FEP(Ar) b材料有效地抑制了表面氧化层的生长。
Dielectric fluoropolymer films of 10−50 nm in thickness were deposited on the (100)-oriented single-crystal silicon and gallium arsenide wafers via RF plasma sputtering of a poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) target. X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, water contact angle measurement, and Fourier transform infrared spectroscopy results indicated that the chemical composition and molecular structure of the sputter-deposited polymer films depended strongly on the type of the sputtering gas used. The dielectric constant of the argon-plasma sputter-deposited fluoropolymer film is about 2.1, which is comparable to those of the pristine FEP and poly(tetrafluoroethylene) films. It was shown that the argon plasma sputter-deposited FEP (s-FEP(Ar)) film as thin as 6 nm could effectively passivate the HCl-etched GaAs(100) substrate under atmospheric conditions. The growth of the surface oxide layer was effectively hindered by the ultrathin s-FEP(Ar) b...