Theory of quasiballistic transport through nanocrystalline silicon dots
Theory of quasiballistic transport through nanocrystalline silicon dots
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DOI：
10.1063/1.3553501
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发表时间：
2011-02
影响因子：
4
通讯作者：
N. Mori;H. Minari;S. Uno;H. Mizuta;N. Koshida
中科院分区：
文献类型：
--
作者：
N. Mori;H. Minari;S. Uno;H. Mizuta;N. Koshida
提出了一个描述多孔硅二极管高能电子发射的物理模型。该模型是基于原子紧束缚方法结合半经典蒙特卡罗模拟。它很好地再现了实验结果的基本特征。初始加速区域在产生准弹道电子发射中起着至关重要的作用。
A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial acceleration region is shown to play a crucial role in generating quasiballistic electron emission.