Evidence of enhanced signal response at high bias voltages in planar silicon detectors irradiated up to 2.2×1016 neq cm−2
Evidence of enhanced signal response at high bias voltages in planar silicon detectors irradiated up to 2.2×1016 neq cm−2
复制标题
在辐射高达 2.2×1016 neq cm−2 的平面硅探测器中，高偏置电压下信号响应增强的证据
DOI：
10.1016/j.nima.2010.04.085
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发表时间：
2011
影响因子：
1.4
通讯作者：
M. Wormald
中科院分区：
文献类型：
--
作者：
G. Casse;A. Affolder;P. Allport;H. Brown;I. McLeod;M. Wormald
用40MHz时钟速度模拟电子学测量了分段平面硅传感器中最小电离粒子辐照到超过2×1016neqcm−2强子效应时所产生的信号。结果显示，在这些剂量后产生了令人惊讶的高信号，远高于在辐射诱导缺陷中心捕获载流子所预测的最大预期电荷。受辐照传感器承受高偏置电压的能力允许收集大量信号，有时比辐照前测量的信号高。
The signal generated by minimum ionising particles in segmented planar silicon sensors irradiated to hadron fluences exceeding 2×1016neqcm−2has been measured with 40MHz clock speed analogue electronics. The results show a surprisingly high signal after these doses, well above the maximum expected charge predicted by the trapping of charge carriers at radiation induced defect centres. The ability of irradiated sensors to withstand high bias voltages allows for the collection of a substantial signal that is sometimes higher than the signal measured before irradiation.