2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
复制标题
DOI：
10.1088/1674-1056/25/2/024204
复制
发表时间：
2016-02-01
影响因子：
1.7
通讯作者：
Niu, Zhi-Chuan
中科院分区：
文献类型：
--
作者：
Yang, Cheng-Ao;Zhang, Yu;Niu, Zhi-Chuan
报道了一种具有浅刻蚀光栅的GaAs基横向耦合分布反馈（LC-DFB）激光器，该激光器在室温下工作于连续波，无需再生长过程。利用干涉光刻技术在脊波导的侧面制作了二阶布拉格光栅。采用1500 μ m谐振腔的折射率耦合LC-DFB激光器在20 ℃下实现了单纵模连续工作，边模抑制比（SMSR）高达24 dB。在室温下（未镀膜端面），最大单模连续波输出功率约为10 mW。获得了230 A/cm（2）的低阈值电流密度，微分量子效率估计为93 mW/A。该激光器具有较好的波长稳定性，且波长稳定性与驱动电流和工作温度无关。
We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 mu m achieves single longitudinal mode continuous-wave operation at 20 degrees C with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm(2) is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.