Indium-doped ZnO nanospirals synthesized by thermal evaporation
Indium-doped ZnO nanospirals synthesized by thermal evaporation
复制标题
热蒸发法合成铟掺杂ZnO纳米螺旋
DOI：
10.1116/1.2889418
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发表时间：
2008-03-01
影响因子：
1.4
通讯作者：
Liang, Yao
中科院分区：
文献类型：
--
作者：
Gao, Hong;Ji, Hong;Liang, Yao
采用一步热蒸发法制备了铟掺杂氧化锌纳米螺旋。透射电子显微照片表明，纳米螺旋结构均匀，没有缺陷。在静电极性电荷模型中，螺旋纳米结构是由纳米带沿±（0001）极面生长的方向滚动而成的。纳米螺旋的典型曲率半径为几微米。In掺杂的纳米螺旋有望具有有趣的光电和机械性能，并可能成为纳米光电和机电系统的潜在构建模块。
Indium-doped ZnO nanospirals were synthesized by one-step thermal evaporation. Transmission electron micrographs show that the nanospirals are structurally uniform and free of defects. The helical nanostructures, which are constructed by rolling nanobelts grown along the ⟨101¯0⟩ direction with the ±(0001) polar planes as the dominate surfaces, are energetically favored in terms of the electrostatic polar charge model. The typical radius of curvature of the nanospirals is several micrometers. The In-doped nanospirals are expected to have interesting optoelectronic and mechanical properties and could be potential building blocks in nanoscale optoelectronic and electromechanical systems.