Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films
Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films
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开关脉冲宽度和应力对Bi3.25La0.75Ti3O12薄膜性能的影响
DOI：
10.1088/1674-1056/19/3/036802
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发表时间：
2010
影响因子：
1.7
通讯作者：
中科院分区：
文献类型：
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作者：
采用传统的金属有机分解法在铂/钛/二氧化硅/硅衬底上制备了Bi3.25La0.75Ti3O12多晶铁电薄膜。观察到随着开关脉冲宽度的增加，剩余极化和矫顽场增大。较宽的开关脉冲可能会导致较差的疲劳性能，这是因为更多的带电缺陷扩散到并被困在磁畴壁上。另一方面，当对薄膜施加压应力时，可以改善薄膜的疲劳性能。这一现象是由于应力作用下磁畴的重新取向造成的。
Polycrystalline ferroelectric Bi3.25La0.75Ti3O12 thin films are prepared on Pt/Ti/SiO2/Si substrates by the conventional metalorganic decomposition method. It is observed that with the increase of switching pulse width, the remnant polarisation and the coercive field increase. A wider switching pulse can result in poorer fatigue properties, which comes from more charged defects diffusing to and being trapped on domain walls. On the other hand, when the compressive stress is applied to films, the fatigue properties can be improved. This phenomenon is due to the reorientation of domains under stress.