Improved performances of Ge2Sb2Te5 based phase change memory by W doping
Improved performances of Ge2Sb2Te5 based phase change memory by W doping
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DOI：
10.7567/jjap.53.050304
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发表时间：
2014-05-01
影响因子：
1.5
通讯作者：
Gong, Yuefeng
中科院分区：
文献类型：
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作者：
Cheng, Xiaonong;Mao, Fuxiang;Gong, Yuefeng
钨掺杂Ge2Sb2Te5材料已被研究用于相变存储。与传统的Ge2Sb2Te5相比，W-0.08(Ge2Sb2Te5)（0.92）相变膜具有更高的结晶温度（255℃）、183℃下10年的数据保留率和更高的结晶电阻。W-x(Ge2Sb2Te5)（1-x）薄膜结晶为稳定的面心立方相，晶粒均匀。基于W-0.08(Ge2Sb2Te5)（0.92）的相变存储器件具有工作时间短（10 ns）和寿命长（6 × 10(5)个周期）的优点。W-x(Ge2Sb2Te5)（1-x）材料是需要良好数据保留和快速操作速度的相变存储器应用的有希望的候选者。(C) 2014 .日本应用物理学会
W-doped Ge2Sb2Te5 materials have been investigated for phase change memory applications. W-0.08(Ge2Sb2Te5)(0.92) phase change film exhibits a higher crystallization temperature (255 degrees C), better data retention of 10 years at 183 degrees C, and higher crystalline resistance compared with traditional Ge2Sb2Te5. The W-x(Ge2Sb2Te5)(1-x) films crystallize into a stable face-centered cubic phase with uniform crystal grains. Phase-change memory device based on W-0.08(Ge2Sb2Te5)(0.92) shows short operation time (10 ns) and good endurance (6 x 10(5) cycles). W-x(Ge2Sb2Te5)(1-x) material is a promising candidate for phase-change memory applications that require good data retention and fast operation speed. (C) 2014 The Japan Society of Applied Physics