Computational design of GeSe/graphene heterojunction based on density functional theory

Computational design of GeSe/graphene heterojunction based on density functional theory
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基于密度泛函理论的GeSe/石墨烯异质结的计算设计

DOI:
10.1088/2053-1591/aaf5a0
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发表时间:
2018-12
影响因子:
2.3
通讯作者:
Yuliang Mao
Yuliang Mao
中科院分区:
材料科学4区
文献类型:
--
作者:
Congsheng Xu;Jianmei Yuan;D;an Wang;Yuliang Mao

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Based on density functional theory, we computational designed the hetero junction composed by GeSe monolayer and graphene. The effects of interlayer coupling, strains and electric fields on the electronic structures of the designed GeSe/graphene (G/g) hetero structure are explored. We demonstrated that both the intrinsic electric properties of the GeSe monolayer and graphene are well preserved in G/g hetero structure. It is found that an energy gap of 0.17 eV in graphene is opened by decreasing the interlayer distance in G/g hetero structure. The height of Schottky barrier can be effectively tuned by the interlayer distance between GeSe monolayer and graphene. Moreover, we found that applying in-plane strains and the electric fields perpendicular to the G/g hetero structure can control the Schottky barriers at the G/g interface. Our results predict that the ultra-thin G/g hetero structure can be used as two-dimensional semiconductor-based optoelectronic devices.
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