Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy
Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy
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DOI：
10.1016/j.jcrysgro.2016.12.002
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发表时间：
2017-04
影响因子：
1.8
通讯作者：
Hasegawa Ryosuke;A. Yoshikawa;T. Morishita;Y. Moriyasu;K. Nagase;N. Kuze
中科院分区：
文献类型：
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作者：
Hasegawa Ryosuke;A. Yoshikawa;T. Morishita;Y. Moriyasu;K. Nagase;N. Kuze
