ENHANCEMENT OF THERMOELECTRIC POWER FACTOR BY A SILICON SPACER IN MODULATION-DOPED Si-HMS-Si

ENHANCEMENT OF THERMOELECTRIC POWER FACTOR BY A SILICON SPACER IN MODULATION-DOPED Si-HMS-Si
复制标题

DOI：
10.1142/s1793292011002809
复制
发表时间：
2011-11
期刊：
NANO
影响因子：
1.2
通讯作者：
Q. Hou;B. Gu;Y. Chen;Y. J. He
Q. Hou;B. Gu;Y. Chen;Y. J. He
中科院分区：
材料科学4区
文献类型：
--
作者：
Q. Hou;B. Gu;Y. Chen;Y. J. He

文献摘要

被引文献

相似文献

在调制掺杂的Si（Al）-MnSi 1.7-Si（Al）三明治结构中，未掺杂硅层（间隔层）的引入显著提高了热电功率因数。该未掺杂的硅层插入在MnSi1.7（HMS）和Al掺杂的硅层之间。在300 ~ 683 K范围内，当间隔层厚度适当时，电阻率急剧下降，且对温度的依赖性较弱。结果表明，在683 K时，薄膜的热电功率因数可达0.973 × 10-3 W/m-K2，比未掺杂的MnSi 1.7薄膜的热电功率因数提高了近10倍。
The introduction of an un-doped silicon layer (spacer) enhances significantly the thermoelectric power factor in modulation-doped Si(Al)-MnSi1.7-Si(Al) sandwich structure. This un-doped silicon layer is inserted between the MnSi1.7 (HMS) and Al-doped silicon layers. With a proper spacer thickness, the electrical resistivity decreases sharply and is weakly dependent on temperature from 300 K to 683 K. As a result, the thermoelectric power factor can reach 0.973 × 10-3 W/m-K2 at 683 K, which is about ten times larger than that of an ordinary MnSi1.7 film without modulation doping.