IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS
IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS
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DOI：
10.1109/68.392224
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发表时间：
1994-12-01
影响因子：
2.6
通讯作者：
ROSENZWEIG, J
中科院分区：
文献类型：
--
作者：
WEISSER, S;ESQUIVIAS, I;ROSENZWEIG, J
我们基于简单的速率方程模型推导了量子阱激光器低于和高于阈值的阻抗的理论表达式，这些电激光器特性被证明是由与载流子捕获/传输和载流子再发射相关的纯电参数主导，高速In0.35Ga0.65As/GaAs多层量子阱激光器的阻抗的晶圆上测量结果与这个简单模型非常吻合，使我们能够提取有效载流子逃逸时间和有效载流子寿命，并估计有效载流子捕获/传输时间，
We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission, The results of on-wafer measurements of the impedance of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time,