An extrinsic component parameter extraction method for high power RF LDMOS transistors
An extrinsic component parameter extraction method for high power RF LDMOS transistors
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DOI：
10.1109/mwsym.2008.4633239
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发表时间：
2008-06
期刊：
影响因子：
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通讯作者：
J. Wood;D. Lamey;M. Guyonnet;D. Chan;D. Bridges;N. Monsauret;P. Aaen
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文献类型：
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作者：
J. Wood;D. Lamey;M. Guyonnet;D. Chan;D. Bridges;N. Monsauret;P. Aaen
提出了一种新的用于大功率RF LDMOS晶体管建模的非本征网络和非本征参数提取方法。这种新方法使用精确的流形去嵌入，电磁仿真，并在很宽的频率范围内的外部网络参数值的优化。新的外部网络适应反馈效应，观察到在高功率晶体管。这种改进的方法使我们能够实现测量和建模的S-参数在0.5至6 GHz的频率范围内，不同的偏置条件之间的良好协议。这个新模型的大信号验证显示了与2.14 GHz测量值的良好匹配。
A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold de-embedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors. This improved methodology allows us to achieve a good agreement between measured and modeled S-parameters in the frequency range of 0.5 to 6 GHz for different bias conditions. Large-signal verification of this new model shows a very good match with measurements at 2.14 GHz.