Novel digital microwave PA with more than 40% PAE over 10 Db power back-off range
Novel digital microwave PA with more than 40% PAE over 10 Db power back-off range
复制标题
新颖%20数字%20微波%20PA%20with%20more%20than%2040%%20PAE%20over%2010%20Db%20power%20back-off%20范围
DOI：
10.1109/mwsym.2017.8059069
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
W. Heinrich
中科院分区：
文献类型：
--
作者：
T. Hoffmann;A. Wentzel;F. Hühn;W. Heinrich
本文提出了一种新颖的GaN基数字功率放大器（PA）电路，在800 MHz LTE频段具有超过10 dB的功率回退范围的高总功率附加效率（PAE）。它包括一个优化的2%级的推挽式末级驱动电路，最大限度地减少了首次提出的损失。高PAE是通过谐振换向的最后一级和一个新的驱动电路的上finalstage晶体管。应用PWM输入信号，数字PA在6 dB和10 dB功率回退时分别实现48%和40%的总体PAE。PAE峰值为62%，最大输出功率为4.7 W。这是第一款在10.5 dB功率回退范围内仅表现出19%的极低PAE压降的数字PA。这些结果与普通模拟PA概念相比具有竞争力，同时保持更高的灵活性和紧凑性。
This paper presents a novel GaN-based digital power amplifier (PA) circuit with a high overall power-added efficiency (PAE) over a 10 dB power back-off range for the 800 MHz LTE-band. It includes an optimized 2%-stage driver circuit for a push-pull final-stage with minimized losses proposed for the first time. High PAE is reached by resonant commutation of the final-stage and a novel driver circuit for the upper finalstage transistor. Applying a PWM input signal the digital PA achieves an overall PAE of 48% and 40% at 6 dB and 10 dB power back-off, respectively. PAE peaks at 62% while maximum output power is 4.7 W. This is the first digital PA exhibiting a very low PAE-drop of only 19%-points over a 10.5 dB power back-off range. These results are competitive to the common analog PA concepts while maintaining higher flexibility and compactness.
A%20三级%20G级%20调制%201%2085%20GHz%20RF%20power%20放大器%20for%20LTE%20applications%20with%20over%2050%%20PAE
DOI：
10.1109/mwsym.2016.7540389
发表时间：
2016
期刊：
2016 IEEE MTT-S International Microwave Symposium (IMS)
影响因子：
--
作者：
N. Wolff;W. Heinrich;M. Berroth;O. Bengtsson
通讯作者：
O. Bengtsson