Energy distribution of interface states generated by oxygen plasma treatment for control of threshold voltage in pentacene thin-film transistors
Energy distribution of interface states generated by oxygen plasma treatment for control of threshold voltage in pentacene thin-film transistors
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DOI：
10.1088/1361-6463/abb554
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发表时间：
2020-10
期刊：
影响因子：
--
通讯作者：
Y. Kimura;Y. Hattori;M. Kitamura
中科院分区：
文献类型：
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作者：
Y. Kimura;Y. Hattori;M. Kitamura
利用电容-电压（C-V）测量方法研究了氧等离子体处理SiO2介质并五苯金属氧化物半导体（MOS）电容器的界面态能量分布。氧等离子体处理用于控制并五苯薄膜晶体管中的阈值电压，将并五苯MOS电容器的C-V曲线以及并五苯薄膜晶体管（TFT）的转移曲线移动到正栅极电压。这种转变是由氧等离子体处理产生的界面态捕获的电子解释的。捕获电子的界面态预计位于低能级。采用与Terman方法等效的方法提取了位于中、高能级的界面态的能量分布。采用分两步计算的方法，分别得到了分布在中、高能级（DM和DH）的界面态密度。D M和D H的数量级为1010-1012 cm−2 eV−1，并且随着等离子体处理时间的增加而增加。
Pentacene metal-oxide-semiconductor (MOS) capacitors with a SiO2 dielectric treated by oxygen plasma have been studied by capacitance-voltage (C-V) measurements to investigate the energy distribution of the interface states. Oxygen plasma treatment, which is used for control of the threshold voltage in pentacene thin-film transistors, shifted the C-V curves of pentacene MOS capacitors to a positive gate voltage as well as the transfer curves of pentacene thin-film transistors (TFTs). The shift is explained by electrons captured at interface states generated by oxygen plasma treatment. The interface states capturing the electrons are expected to locate at low energy levels. The energy distribution of the interface states locating at middle or high energy levels was extracted by a method equivalent to the Terman method. By use of the method in two steps, the interface state densities distributed at middle and high energy levels (D M and D H) were separately obtained. D M and D H were of the order of 1010–1012 cm−2 eV−1, and increased with an increase in plasma treatment time.