Assessment of THz Performance for a Lateral SiGe HBT on SOI With a Laterally Graded Base
Assessment of THz Performance for a Lateral SiGe HBT on SOI With a Laterally Graded Base
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具有横向渐变基底的 SOI 上横向 SiGe HBT 的太赫兹性能评估
DOI：
10.1109/ted.2018.2869551
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发表时间：
2018
影响因子：
3.1
通讯作者：
J. McDonald
中科院分区：
文献类型：
--
作者：
Alexander Derrickson;Amelia H. Peterson;Kurt M. English;Andrew Haslam;Sagnik Nath;J. McDonald
本文对基于绝缘体上硅的分级基极的横向 SiGe 异质结双极晶体管的设计、特性和可行性进行了基于仿真的评估。该器件的设计重点是与 CMOS 工艺、THz <inline-formula> <tex-math notation="LaTeX">${f}_{T}/f_{\max}$ </tex-math></inline-formula> 的集成以及低功耗。这些特性是通过 22 nm 的超薄基极宽度、基极分级以及标准掺杂分布的修改来实现的。在 TCAD 仿真中，n-p-n 器件的单位增益截止频率 (<inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula>) 为 1.2 THz，最大振荡频率 (<inline-formula> <tex-math notation="LaTeX">${f}_{\max}$ </tex-math></inline-formula>）为 2 THz。同一设计的 p-n-p 的 <inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula> 为 900 GHz，<inline-formula> <tex-math notation="LaTeX">${f}_{\max}$ </tex-math></inline-formula> 为 1.8 THz。附加的蒙特卡罗图显示了器件长度上的电子速度和载流子密度，并讨论了所提出器件中的弹道效应。为了证明该器件的可行性，还总结了可能的制造工艺流程。
This paper presents a simulation-based assessment of the design, characteristics, and feasibility of a lateral SiGe heterojunction bipolar transistor with a graded base on a silicon on insulator. A device was created with a focus on integration with the CMOS process, THz <inline-formula> <tex-math notation="LaTeX">${f}_{T}/f_{\max}$ </tex-math></inline-formula>, and low-power dissipation. These characteristics are achieved with an ultrathin base width of 22 nm, grading of the base, and modification of standard doping profiles. In TCAD simulations, the n-p-n device has a unity gain cutoff frequency (<inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula>) of 1.2 THz and maximum oscillation frequency (<inline-formula> <tex-math notation="LaTeX">${f}_{\max}$ </tex-math></inline-formula>) of 2 THz. The p-n-p of the same design has <inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula> of 900 GHz and <inline-formula> <tex-math notation="LaTeX">${f}_{\max}$ </tex-math></inline-formula> of 1.8 THz. Additional Monte Carlo plots that show electron velocity and carrier densities across the length of the device, and a discussion on ballistic effects in the proposed devices are presented. To demonstrate the feasibility of the device, a possible process flow for fabrication is also summarized.