Tc depression and superconductor-insulator transition in molybdenum nitride thin films
Tc depression and superconductor-insulator transition in molybdenum nitride thin films
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氮化钼薄膜中的 Tc 降低和超导-绝缘体转变
DOI：
10.1088/1742-6596/969/1/012064
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Shinozaki B
中科院分区：
文献类型：
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作者：
Ichikawa F;Makise K;Tsuneoka T;Maeda S;Shinozaki B
我们研究了氮化钼(MON)薄膜的T_c下降和超导-绝缘体转变。采用反应直流磁控溅射方法，在Ar和N2混合气体中，在(100)MgO衬底上制备了薄膜。在厚度为3 nm和60 nm范围内制备了几十种MON薄膜。电阻测量采用直流四探针法。结果表明，厚膜的Tc从6.6K下降到6.6K，并随正常方块电阻的增大而减小
We have studied that the T c depression and the superconductor-insulator transition (SIT) in molybdenum nitride (MoN) thin films. Thin films were fabricated by reactive DC magnetron sputtering method onto (100) MgO substrates in the mixture of Ar and N 2 gases. Several dozen MoN thin films were prepared in the range of 3 nm< thickness d< 60 nm. The resistance was measured by a DC four-probe technique. It is found that T c decreases from 6.6 K for thick films with increase of the normal state sheet resistance